msco 934 a 1 0 - 15 -9 8 dsw2n2219a <-> (34724) 2n 2219 a features features meets mil 19500 / 251 collector - base voltage 75 v collector - current 800 ma medium current , bipolar transistor available in to-5 maximum ratings rating symbol value unit collector - emitter voltage v ceo 50 vdc collector - base voltage v cbo 75 vdc emitter - base voltage v ebo 6 vdc collector current - continuous i c 800 madc total device dissipation @ t a = 25 c p d 0.8 w atts derate above 25 c 4.6 mw/ c total device dissipation @ t c = 25 c p d 1.0 watts derate above 25 c 17.0 mw/ c operating junction&storage temperature range t j , t stg - 55 to +200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r q q ja 217 c/w thermal resistance, junction to case r q q jc 59 c/w 580 pleasant st. watertown, ma 02472 ph: (617) 926-0404 fax: (617) 924-1235 small signal bipolar npn silicon switching transistor jan, jantx, jantxv to-39
msco 934 a 1 0 - 15 -9 8 dsw2n2219a <-> (34724) 2n 2219 a electrical characteristics (t a = 25 c unless otherwise noted) off characteristic symbol min max unit collector - emitter breakdown voltage (1) v(br) ceo ( i c = 10 ma dc, i b = 0 ) 50 vdc collector - base breakdown voltage v(br) cbo ( i c = 10 m m adc, i e = 0 ) 75 vdc emitter - base breakdown voltage v(br) ebo ( i e = 10 m m adc, i c = 0 ) 6 vdc collector - emitter cutoff current i ces ( v ce = 50 vdc ) 10 nadc collector - base cutoff current i cbo ( v cb = 60 vdc , i e = 0 ) 10 nadc ( v cb = 60 vdc, i e = 0, t a = 150 c ) 10 m m adc emitter - base cutoff current i ebo ( v eb = 4 vdc ) 10 nadc ( v eb = 6 vdc ) 10 m m adc on characteristic symbol min max unit dc current gain h fe ( i c = 0.1 ma dc, v ce = 10 vdc ) (1) 5 0 ( i c = 1 ma dc, v ce = 10 vdc ) (1) 7 5 325 ( i c = 10 ma dc, v ce = 10 vdc ) (1) 100 ( i c = 150 ma dc, v ce = 10 vdc ) (1) 100 300 ( i c = 500 ma dc, v ce = 10 vdc ) (1) 30 ( i c = 10 ma dc, v ce = 10 vdc, t j = -55 c ) (1) 35 collector - emitter saturation voltage v ce(sat) ( i c = 150 madc, i b = 15 madc ) (1) 0.3 vdc ( i c = 500 madc, i b = 50 madc ) (1) 1.0 vdc base - emitter saturation voltage v be(sat) ( i c = 150 madc, i b = 15 madc ) (1) 0.6 1.2 vdc ( i c = 500 madc, i b = 50 madc ) (1) 2.0 vdc 1. pulse test: pulse width 300 m s, duty cycle .2 %
msco 934 a 1 0 - 15 -9 8 dsw2n2219a <-> (34724) 2n 2219 a electrical characteristics (t a = 25 c unless otherwise noted) small - signal characteristics symbol min max unit output capacitance c obo ( v cb = 10 vdc, i e = 0, 100khz f 1 mhz ) 8.0 pf input capacitance c ibo ( v eb = 0.5 vdc, i c = 0, 100khz f 1 mhz ) 25 pf switching characteristics symbol min max unit turn - on time t on ( v cc = 30 vdc, i c = 150 madc, i b1 =15 madc) ( see figure 1 ) 35 ns turn - off time t off ( v cc = 30 vdc, i c = 150 ma dc , i b1 = - i b2 = 15 madc) ( see figure 2 ) 300 ns small - signal ac characteristics (t a = 25 c) low frequency symbol min max unit common - emitter forward current transfer ratio h fe ( i c = 1 ma, v ce = 10 v, f = 1khz ) 75 high frequency common - emitter forward current transfer ratio |h fe | ( i c = 20 ma, v ce = 20 v, f = 100 mhz ) 2.5 12 s p i c e m o d e l (based upon typical device characteristics) * 1 q2n 2219 a npn ( is = 21.2f xti = 3.0 eg = 1.11 vaf = 190.7 bf = 200.2 ise = 35.39 + ne = 3.07 ikf = 0.5411 nk = 0.5465 xtb = 1.5 br = 1.0 isc = 31.3 p + nc = 1.51 ikr = 23.14m rc = 0.4055 cjc = 19.4p mjc = 0.3333 vjc = 0.75 + fc = 0.5 cje = 29.6p mje = 0.3333 vje = 0.75 tr = 323.0 n tf = 562.6 p + itf = 1.0 xtf = 0.0 vtf = 10.0 ) *1. microsemi corp. claims no responsibility for misapplication of spice model information. spice modeling should be used as a precursor guide to in-circuit performance. actual performance is the responsibility of the user/designer.
msco 934 a 1 0 - 15 -9 8 dsw2n2219a <-> (34724) 2n 2219 a to-39 case outline die outline die characteristics back is collector chip thickness is: 10 mils typ metalization is: top = al, back = au
msco 934 a 1 0 - 15 -9 8 dsw2n2219a <-> (34724) 2n 2219 a figure 1 saturated turn-on time test circuit figure 2 saturated turn-off time test circuit t
msco 934 a 1 0 - 15 -9 8 dsw2n2219a <-> (34724) 2n 2219 a figure 3 figure 4 .0001 .001 .01 .1 1 ic collector current (a) 0 50 100 150 200 250 hfe current gain 0 50 100 150 200 250 dc current gain vce = 10 v typ @ 25c typ @ -55c .0001 .001 .01 .1 1 ib, base current (a) 0.0 0.2 0.4 0.6 0.8 1.0 vce, collector-emitter (v) 0.0 0.2 0.4 0.6 0.8 1.0 collector saturation vs base current tj = 25 c ic = 500 ma ic = 150 ma
msco 934 a 1 0 - 15 -9 8 dsw2n2219a <-> (34724) 2n 2219 a figure 5 figure 6 .001 .01 .1 1 ib, base current (a) 0.50 0.75 1.00 1.25 vbe, base-emitter voltage (v) 0.50 0.75 1.00 1.25 base saturation vs base current tj = 25 c ic = 150 ma ic = 500 ma .01 .1 1 10 100 reverse junction voltage (v) 0 5 10 15 20 25 30 junction capacitance (pf) 0 5 10 15 20 25 30 junction capacitance tj = 25 c 100 khz < f < 1 mhz cobo cibo
msco 934 a 1 0 - 15 -9 8 dsw2n2219a <-> (34724) 2n 2219 a figure 7 figure 8 10 100 1000 collector current (ma) 100 10 100 ton time (ns) 100 10 100 switching turn - 0n time tj = 25 c ic/ib = 10 min. max. 500 10 100 collector current (ma) 1000 100 1000 toff time (ns) 1000 100 1000 switching turn - off time tj = 25 c ic/ib = 10 min. max.
msco 934 a 1 0 - 15 -9 8 dsw2n2219a <-> (34724) 2n 2219 a figure 9 1 10 100 1000 frequency mhz .01 .1 1 normalized gain .01 .1 1 normalized gain vs frequency tj = 25c ic = 20 ma vce = 20 v
|
